DocumentCode
1952531
Title
A statistical model for electromigration failures
Author
Yoh, Gilbert ; Najm, Farid N.
Author_Institution
Integrated Circuits Bus. Div., Agilent Technol., Fort Collins, CO, USA
fYear
2000
fDate
2000
Firstpage
45
Lastpage
50
Abstract
The lognormal has been traditionally used to model the failure time distribution of electromigration failures. However, when used to estimate the failure of large metal layers, it leads to a clear disagreement with established empirical data. To resolve this problem, we propose to use a shifted lognormal (SLN) as a better model of the failure time of individual wires. We will show that the SLN is well justified because it matches other more detailed and more physical models, such as the multilognormal. We will also show that the SLN exhibits the right behavior for long wires. Finally, we will provide an estimation methodology by which the parameters of the SLN can be estimated from failure data. Finally, the analysis will be extended to large metal layers where the advantages of using SLN over LN will be clearly demonstrated
Keywords
electromigration; failure analysis; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; statistical analysis; electromigration failures; estimation methodology; failure time distribution; individual wires; metal layers; shifted lognormal; statistical model; Copper; Data analysis; Electromigration; Grain boundaries; Inorganic materials; Integrated circuit modeling; Integrated circuit technology; Lead; Process design; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2000. ISQED 2000. Proceedings. IEEE 2000 First International Symposium on
Conference_Location
San Jose, CA
Print_ISBN
0-7695-0525-2
Type
conf
DOI
10.1109/ISQED.2000.838852
Filename
838852
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