An improved method for determining the inversion layer mobility of electrons in trench MOSFETs

Author

van den Heuvel, M.G.L. ; Hueting, R.J.E. ; Hijzen, E.A. ; Zandt, M. A A in´t

Author_Institution

Fac. of Appl. Phys., Twente Univ., Enschede, Netherlands

fYear

2003

fDate

14-17 April 2003

Firstpage

173

Lastpage

176

Abstract

For the first time trench sidewall effective electron mobility (μ_eff) values were determined by using the split capacitance-voltage (CV) method for a large range of transversal effective field (E_eff) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. In conclusion, the results show that (1) the split CV method is an accurate method for determining μ_eff(E_eff) data in trench MOSFETs, (2) the {100} μ_eff data approach published data of planar MOSFETs for high E_eff and (3) the mobility behavior can be explained with generally accepted scattering models for the entire range of E_eff. The results are important for the optimization of trench power devices.

Keywords

MOSFET; capacitance measurement; electron mobility; inversion layers; semiconductor device measurement; voltage measurement; crystal orientation; doping concentration; inversion layer mobility; mobility behavior; planar MOSFET; split capacitance-voltage; trench MOSFET; trench sidewall effective electron mobility; Capacitance-voltage characteristics; Current measurement; Doping; Electrochemical machining; Electron mobility; MOSFETs; Physics; Scattering; Shape; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225257

Filename

1225257