Development of a robust 50V 0.35 μm based Smart Power Technology using trench isolation

Author

Pestel, F. De ; Moens, P. ; Hakim, H. ; Vleeschouwer, H. De ; Reynders, K. ; Colpaert, T. ; Colson, P. ; Coppens, P. ; Boonen, S. ; Bolognesi, D. ; Tack, M.

Author_Institution

Technol. R&D, AMI Semicond. Belgium BVBA, Oudenaarde, Belgium

fYear

2003

fDate

14-17 April 2003

Firstpage

182

Lastpage

185

Abstract

This paper describes a new 0.35 μm CMOS based smart power technology. The so-called I3T50 technology belongs to a series of intelligent interface technologies developed within AMI Semiconductor over the past years. This technology is suitable for applications up to 50 V, such as automotive, peripheral and consumer applications. Trench isolation is used to isolate the devices, substantially reducing the isolation area. The set of devices available within this technology consists of n-type and p-type CMOS and DMOS devices, bipolar transistors, a high voltage floating diode, passive components, OTP memory and a set of ESD protection structures. In the future, the technology will be extended also with a modular embedded flash memory.

Keywords

CMOS integrated circuits; isolation technology; power integrated circuits; robust control; 0.35 micron; 50 V; CMOS; DMOS device; ESD protection structure; OTP memory; bipolar transistor; high voltage floating diode; intelligent interface technology; passive component; smart power technology; trench isolation; Ambient intelligence; Automotive engineering; Bipolar transistors; CMOS technology; Electrostatic discharge; Isolation technology; Protection; Robustness; Semiconductor diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225259

Filename

1225259