Title :
Low gate charge 30 V n-channel LDMOS for DC-DC converters
Author :
Yasuhara, Norio ; Matsushita, Ken´ichi ; Nakayama, Kazuya ; Tanaka, Bungo ; Hodama, Shin´ichi ; Nakagawa, Akio ; Nakamura, Kazutoshi
Author_Institution :
Semicond. Co., Toshiba Corp., Kawasaki, Japan
Abstract :
We have developed low on-resistance and low feedback gate charge 30 V n-channel LDMOS for MHz switching DC-DC converter applications. The feature of the device is that it has achieved a high avalanche capability of more than 20 amperes together with Ron˙Qqd value of 10 mΩnC, which is the lowest, ever reported for 30 V devices. A low gate resistance of 0.4 Ω was achieved by two layer metal electrodes. These features are desirable for MHz switching frequency DC-DC converters to obtain higher efficiency. Good avalanche capability of 20 amperes is achieved under unclamped inductive switching (UIS) condition.
Keywords :
DC-DC power convertors; MOS integrated circuits; electric charge; 0.4 ohm; 20 A; 30 V; DC-DC converter; high avalanche capability; low gate charge; low on-resistance; n-channel LDMOS; switching frequency; two layer metal electrode; unclamped inductive switching; DC-DC power converters; Degradation; Electrodes; FETs; Feedback; MOSFETs; Substrates; Switching converters; Switching frequency; Switching loss;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225260
