Title :
A 150 GHz sub-0.1- mu m E/D MODFET MSI process
Author :
Rohdin, H. ; Nagy, A.
Author_Institution :
Hewlett-Packard Labs., Palo Alto, CA, USA
Abstract :
We report a method for fabricating sub-0.1- mu m gates using conventional optical contact lithography, exploiting self-limiting notch formation in conformal PECVD oxide between ohmic contacts, and the limited lateral etch of oxide by RIE. The resulting gate openings in the oxide are very narrow ( approximately=700 AA), and quite uniform ( sigma <0.2x). 154 GHz current gain cutoff frequency has been extrapolated for a pseudomorphic InGaAs-channel E-MODFET made in this way. Functioning prescalers have been fabricated and characterized on-wafer.<>
Keywords :
MMIC; field effect integrated circuits; frequency dividers; high electron mobility transistors; ohmic contacts; photolithography; plasma CVD; sputter etching; 0.1 micron; 154 GHz; E/D MODFET MSI process; InGaAs; RIE; conformal PECVD oxide; current gain cutoff frequency; limited lateral etch; ohmic contacts; optical contact lithography; prescalers; self-limiting notch formation; FET integrated circuits; Frequency conversion; MMICs; MODFETs; Ohmic contacts; Photolithography; Plasma CVD; Sputter etching;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307371
