Title :
High power silicon RF LDMOSFET technology for 2.1GHz power amplifier applications
Author :
Xu, Shuming ; Baiocchi, Frank ; Safar, Hugo ; Lott, Joel ; Shibib, Ayman ; Xie, Zhijian ; Nigam, Tanya ; Jones, Bailey ; Thompson, Brain ; Desko, John ; Gammel, Peter
Author_Institution :
Agere Syst., Allentown, PA, USA
Abstract :
In this paper, RF LDMOSFET is demonstrated with excellent RF performance. It achieves high power gain of 14.5dB with a high power of 130W at 2.1GHz. Its high efficiency and high linearity makes it to be highly desired by applications. 2mil substrate enables the best-in-class of thermal stability. Low HCI degradation, integrated ESD and gold metal ensure a good long-term reliability.
Keywords :
UHF power amplifiers; elemental semiconductors; power MOSFET; silicon; 130 W; 14.5 dB; 2.1 GHz; gold metal; high efficiency; high linearity; high power gain; high power silicon RF LDMOSFET technology; integrated ESD; long-term reliability; low HCI degradation; power amplifier applications; thermal stability; Electrostatic discharge; Gold; High power amplifiers; Human computer interaction; Linearity; Radio frequency; Radiofrequency amplifiers; Silicon; Thermal degradation; Thermal stability;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225261
