DocumentCode
1952736
Title
Deep trench terminations using ICP RIE for ideal breakdown voltages
Author
Park, Chanho ; Jinmyung Kim ; Taehoon Kim ; Kim, Deok J.
Author_Institution
Fairchild Semicond. Int. Inc., Kyonggi-Do, South Korea
fYear
2003
fDate
14-17 April 2003
Firstpage
199
Lastpage
202
Abstract
Deep trench terminations (DTT) having no cylindrical and spherical junctions are proposed for high voltage power devices. The proposed junction terminations are implemented using ICP RIE in the edge area including scribe lane, and show near ideal breakdown voltages. The devices with deep trench terminations have higher breakdown voltages consuming much smaller junction termination area than the conventional devices with multiple field limiting rings at the same voltage and current ratings.
Keywords
power bipolar transistors; semiconductor device breakdown; sputter etching; ICP RIE; bipolar power transistors; deep trench termination; edge area; high voltage power device; ideal breakdown voltage; junction termination; multiple field limiting ring; scribe lane; Breakdown voltage; Etching; Insulation; Leakage current; Metallization; Oxidation; Plasma applications; Power transistors; Resists; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225263
Filename
1225263
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