Title :
Hot-carrier effects in fully-depleted SOI nMOSFETs
Author :
Su, L.T. ; Hao Fang ; Chung, J.E. ; Antoniadis, D.A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
Hot-electron gate current in SOI nMOSFETs has been measured as a function of back-gate bias, silicon film thickness, and substrate doping. Gate currents are reduced in fully-depleted SOI and in thinner silicon films, indicating a reduction in drain electric field, as compared to partially-depleted and bulk devices. Hot-electron degradation confirms some of the trends observed in gate current, however, additional degradation mechanisms in SOI complicate the evaluation of device lifetime.<>
Keywords :
characteristics measurement; electric current measurement; elemental semiconductors; hot carriers; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; SOI nMOSFET; Si; Si film thickness; back-gate bias; device lifetime; drain electric field; gate currents; hot-carrier effects; hot-electron degradation; hot-electron gate current; substrate doping; Current measurement; Hot carriers; Insulated gate FETs; Semiconductor-insulator interfaces; Silicon;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307376
