DocumentCode
1952773
Title
A novel trench concept for the fabrication of compensation devices
Author
Rüb, M. ; Ahlers, D. ; Baumgartl, J. ; Deboy, G. ; Friza, W. ; Häberlen, O. ; Steinigke, I.
Author_Institution
Infineon IFDA, Villach, Germany
fYear
2003
fDate
14-17 April 2003
Firstpage
203
Lastpage
206
Abstract
In this paper we propose a novel trench based concept for compensation devices. Our approach includes the conformal deposition of two epitaxial layers in the trench. We present simulation results indicating an improvement in Rdson*A by more than 50 % versus 600V CoolMOS as today´s benchmark in compensation devices. Furthermore we demonstrate the successful implementation of the necessary single processes such as deep trench etch (aspect ratio 12:1) and conformal defect free epitaxy.
Keywords
compensation; epitaxial layers; simulation; compensation device; conformal defect free epitaxy; conformal deposition; deep trench etch; epitaxial layer; trench concept; Costs; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Manufacturing; Proposals; Substrates; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225264
Filename
1225264
Link To Document