Title :
Thermo-mechanical characterization and modeling of TSV annealing behavior
Author :
Saettler, P. ; Kovalenko, D. ; Meier, K. ; Roellig, M. ; Boettcher, M. ; Wolter, K.J.
Author_Institution :
Electron. Packaging Lab., Tech. Univ. Dresden, Dresden, Germany
Abstract :
This paper focuses on the characterization and Finite Element (FE) simulation of thermo-mechanical loads in Through Silicon Vias (TSVs), which emerge due to the annealing process after electro chemical deposition (ECD) of copper. For this purpose a FE-model has been implemented, which calculates the stress state of TSV structures after annealing. To validate the model, measurements using μ-Raman spectroscopy (μRS) were carried out. Results from Finite Element Modeling (FEM) were converted into their corresponding Raman-Shifts to make it comparable to μRS measurements. Additionally warpage and copper protrusion were measured to receive a complete picture of the occurring mechanisms and boundary conditions.
Keywords :
annealing; finite element analysis; three-dimensional integrated circuits; Raman spectroscopy; TSV annealing behavior modeling; TSV structures; annealing process; boundary condition; copper protrusion; electrochemical deposition; finite element modeling; finite element simulation; thermomechanical characterization; thermomechanical loads; through silicon vias; warpage; Annealing; Gain measurement; ISO standards; Materials; Strain; Stress measurement; Through-silicon vias;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on
Conference_Location :
Cascais
Print_ISBN :
978-1-4673-1512-8
DOI :
10.1109/ESimE.2012.6191745
