Title :
A novel gain boosting technique for design of low power narrow-band RFCMOS LNAs
Author :
Asgaran, S. ; Deen, M. Jamal
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
Abstract :
A novel gain boosting technique to increase the power gain of narrow-band RF low noise amplifiers is developed and verified. This technique is based on utilizing a negative resistance in the cascode configuration that is the most common configuration in designing LNAs. Using this technique, a LNA, called the negative resistance cascode LNA, was designed. The LNA operates at 7 GHz and consumes only 7.2 mW of power. It is shown that the negative resistance technique provides an additional gain of 10 dB at the cost of only 0.6 mW of extra power consumption.
Keywords :
CMOS integrated circuits; integrated circuit design; integrated circuit noise; low-power electronics; negative resistance circuits; power consumption; radiofrequency amplifiers; radiofrequency integrated circuits; 0.6 mW; 10 dB; 7 GHz; 7.2 mW; gain boosting technique; low noise amplifier design; low power narrow-band RFCMOS LNA; negative resistance cascode LNA; power consumption; Boosting; CMOS technology; Energy consumption; Integrated circuit technology; Low-noise amplifiers; Narrowband; Radio frequency; Radiofrequency amplifiers; Semiconductor device noise; Voltage;
Conference_Titel :
Circuits and Systems, 2004. NEWCAS 2004. The 2nd Annual IEEE Northeast Workshop on
Print_ISBN :
0-7803-8322-2
DOI :
10.1109/NEWCAS.2004.1359089
