Title :
Dual Gate Lateral Inversion Layer Emitter Transistor for power and high voltage integrated circuits
Author :
Udugampola, U.N.K. ; McMahon, R.A. ; Udrea, F. ; Sheng, K. ; Amaratunga, G.A.J. ; Narayanan, E.M.S. ; Hardikar, S. ; De Souza, M.M.
Author_Institution :
Eng. Dept., Cambridge Univ., UK
Abstract :
The Dual Gate Lateral Inversion Layer Emitter Transistor (DGLILET) is a versatile device with controlled carrier injection and ultra fast switching capability. The DGLILET has an improved trade off between the on-state and turn off losses enabling the performance of High Voltage Integrated Circuits (HVICs) to be enhanced by reducing overall losses at switching frequencies over approximately 10 kHz. This paper focuses on the use of the DGLILET in these applications and demonstrates experimental results of the fabricated devices confirming the enhanced performance.
Keywords :
high-voltage techniques; insulated gate bipolar transistors; inversion layers; power integrated circuits; power transistors; controlled carrier injection; dual gate lateral inversion layer emitter transistor; enhanced performance; high voltage integrated circuit; improved trade off; switching frequency; ultra fast switching capability; Anodes; Application specific integrated circuits; Current density; Insulated gate bipolar transistors; MOSFETs; Performance loss; Power engineering and energy; Switching frequency; Switching loss; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225267
