Title :
Complete vacuum microelectronic structures using GaAs
Author :
Bandy, S. ; Nishimoto, C. ; Webb, C. ; Zdasiuk, G.
Author_Institution :
Varian Ginzton Res. Center, Palo Alto, CA, USA
Abstract :
The particular advantages of using GaAs for the fabrication of field emitter vacuum microelectronic devices is discussed. A completely monolithic structure using GaAs for both the emitter and the gate (and/or anode) is described. Improved immunity to arc damage, ease of micro-machining complex structures and the availability of an insulating substrate are characteristics not shared by any other materials system.<>
Keywords :
III-V semiconductors; electron field emission; gallium arsenide; grain boundaries; semiconductor technology; vacuum microelectronics; GaAs; arc damage immunity; fabrication; field emitter; insulating substrate; micromachining; monolithic structure; vacuum microelectronic devices; Electron emission; Gallium compounds; Semiconductor device fabrication; Vacuum microelectronics;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307381
