DocumentCode
1952971
Title
Analytical collector current density and base transit time models for high-injection regions
Author
Suzuki, K.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
409
Lastpage
412
Abstract
Using perturbation theory focused on modulated electric fields due to injected electrons, we derived analytical models for collector current density, J/sub n/, and base transit time, tau /sub B/, for arbitrarily doped bases. These models are the first valid for arbitrary injection levels before the onset of the Kirk effect, and they include existing models as special cases. Our model predicts that tau /sub B/ for the Gaussian-doped base is still smaller than that for the box-doped base even in high-injection regions.<>
Keywords
bipolar transistors; current density; doping profiles; electric fields; high field effects; perturbation techniques; semiconductor device models; Gaussian-doped base; analytical models; arbitrarily doped bases; base transit time; box-doped base; collector current density; high-injection regions; injected electrons; modulated electric fields; perturbation theory; Bipolar transistors; Current density; Electric fields; Perturbation methods; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307389
Filename
307389
Link To Document