• DocumentCode
    1952971
  • Title

    Analytical collector current density and base transit time models for high-injection regions

  • Author

    Suzuki, K.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    1992
  • fDate
    13-16 Dec. 1992
  • Firstpage
    409
  • Lastpage
    412
  • Abstract
    Using perturbation theory focused on modulated electric fields due to injected electrons, we derived analytical models for collector current density, J/sub n/, and base transit time, tau /sub B/, for arbitrarily doped bases. These models are the first valid for arbitrary injection levels before the onset of the Kirk effect, and they include existing models as special cases. Our model predicts that tau /sub B/ for the Gaussian-doped base is still smaller than that for the box-doped base even in high-injection regions.<>
  • Keywords
    bipolar transistors; current density; doping profiles; electric fields; high field effects; perturbation techniques; semiconductor device models; Gaussian-doped base; analytical models; arbitrarily doped bases; base transit time; box-doped base; collector current density; high-injection regions; injected electrons; modulated electric fields; perturbation theory; Bipolar transistors; Current density; Electric fields; Perturbation methods; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0817-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1992.307389
  • Filename
    307389