DocumentCode :
1952983
Title :
Highly reliable p-LDMOSFET with an uneven racetrack source for PDP driver IC applications
Author :
Roh, Tae Moon ; Lee, Dae Woo ; Kim, Sang-Gi ; Park, Il-Yong ; Kwon, Sung Ku ; Yang, Yil Suk ; Yu, Byoung Gon ; Kim, Jongdae
Author_Institution :
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fYear :
2003
fDate :
14-17 April 2003
Firstpage :
236
Lastpage :
239
Abstract :
The electrical characteristics of p-LDMOSFETs with uneven racetrack source (URS) and conventional racetrack source (CRS) before and after electrical DC stress were investigated to improve hot carrier immunity for PDP driver. The breakdown voltage of p-LDMOSFET with URS in on-state was about 30% higher than that of p-LDMOSFET with CRS at on-state. The variations of threshold voltage (Vt), maximum transconductance (gmmax), saturated drain current (IDSsat) of p-LDMOSFET with URS after electrical DC stress were much lower than those of p-LDMOSFET with CRS. The variation of specific-on resistance (Ron) of p-LDMOSFET with URS after stress was much lower than that of p-LDMOSFET with CRS.
Keywords :
driver circuits; power MOSFET; power integrated circuits; PDP driver IC application; breakdown voltage; conventional racetrack source; electrical DC stress; electrical characteristic; highly reliable p-LDMOSFET; hot carrier immunity; maximum transconductance; saturated drain current; specific-on resistance; threshold voltage; uneven racetrack source; Application specific integrated circuits; Current density; Degradation; Driver circuits; Hot carrier effects; Hot carriers; MOSFET circuits; Moon; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
Type :
conf
DOI :
10.1109/ISPSD.2003.1225272
Filename :
1225272
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1952983
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