A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors

Author

Verzellesi, G. ; Vendrame, L. ; Turetta, R. ; Pavan, P. ; Chantre, A. ; Marty, A. ; Cavone, M. ; Rivoir, R. ; Zanoni, E.

Author_Institution

Dipartimento di Elettronica e Inf., Padova Univ., Italy

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

413

Lastpage

416

Abstract

A new DC technique for extracting parasitic base resistance, R/sub B/, of advanced bipolar transistors is described. The technique is based on impact-ionization-induced base current reversal and enables R/sub B/ to be measured as a function of collector-base voltage and of emitter current. To obtain accurate results, the influence of the Early effect on the emitter-base voltage at constant emitter current must be accounted for. Measured values of R/sub B/ are correlated with current crowding phenomena, which can be directly observed by means of emission microscopy.<>

Keywords

bipolar transistors; electric resistance measurement; impact ionisation; semiconductor device testing; DC technique; Early effect; base resistance extraction; bipolar transistors; collector-base voltage; current crowding phenomena; emission microscopy; emitter current; emitter-base voltage; experimental technique; impact-ionization-induced base current reversal; parasitic base resistance; Bipolar transistors; Impact ionization; Resistance measurement; Semiconductor device testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307390

Filename

307390