Title :
Sub-millisecond energy handling capability improvement of IC power devices with thick copper metallization
Author :
Alagi, F. ; Labate, L. ; Andreini, A. ; Contiero, C.
Author_Institution :
STMicroelectronics, Cornaredo, Italy
Abstract :
Failure energy measurements under rectangular power pulses along with basic modeling allow quantifying the improvement in energy handling capability due to a thick copper layer introduced on top of large area IC MOSFETs, in the sub-millisecond pulse duration range. The improvement is found to be approximately linear with the copper layer thickness, with a rate of about 1.1% μm-1.
Keywords :
copper; failure analysis; integrated circuit metallisation; power integrated circuits; IC MOSFET; IC power device; basic modeling; copper layer thickness; failure energy measurement; rectangular power pulse; sub-millisecond energy handling capability; thick copper layer; thick copper metallization; Copper; Energy measurement; Integrated circuit interconnections; Integrated circuit modeling; MOSFETs; Metallization; Power integrated circuits; Pulse measurements; Silicon; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225275
