Title :
2D finite elements electro-thermal modeling for IGBT: Uni and multicellular approach
Author :
Boubkari, K. EI ; Azzopardi, S. ; Théolier, L. ; Deletage, J.Y. ; Woirgard, E.
Author_Institution :
IMS, Univ. de Bordeaux, Talence, France
Abstract :
In this paper, insulated gate bipolar transistor (IGBT) models in the literature are reviewed, analyzed, and classified in different categories. We compare unicellular and multicellular modeling for the hard-switching between finite elements electro-thermal simulations applied on a silicon power transistor and we show the advantages of multicellular modeling applying on a planar gate non punch through IGBT (PG-NPT-IGBT). It appears that degradation of one or more cells shows intercellular electrical phenomena which can lead to failure of components.
Keywords :
finite element analysis; insulated gate bipolar transistors; power transistors; silicon; 2D finite element modeling; PG-NPT-IGBT; electro-thermal modeling; hard-switching; insulated gate bipolar transistor; intercellular electrical phenomena; multicellular modeling; planar gate nonpunch through IGBT; silicon power transistor; unicellular modeling; Analytical models; Computational modeling; Doping; Etching; Insulated gate bipolar transistors; Switches; Thermal analysis;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on
Conference_Location :
Cascais
Print_ISBN :
978-1-4673-1512-8
DOI :
10.1109/ESimE.2012.6191757
