Aluminium oxide technology for millimeter wave devices

Author

Muravjev, Valentine V. ; Tamelo, Alexander A. ; Sokol, Vital A. ; Parkun, Uladzimir M.

Author_Institution

Byelorussian State Univ. of Informatics & Radioelectronics, Minsk, Belarus

Volume

1

fYear

2002

fDate

2002

Firstpage

271

Abstract

In this paper we present the results of the design and research of millimetre-wave amplifiers which had been manufactured on aluminium oxide substrates of a new type. The design of the amplifier is carried out based on calculated parameters offered by an equivalent scheme and measured V-I characteristics of the HEMT. The transition processes determining the mode of amplification in the HEMT amplifier have been simulated. The achieved parameters of multistage amplifiers are as follows: Gp=26 dB, NF=2.1 dB at f=28...31 GHz and Gp=24 dB, NF=2.4 dB at f=33.5...36 GHz.

Keywords

HEMT circuits; alumina; equivalent circuits; hybrid integrated circuits; millimetre wave amplifiers; millimetre wave integrated circuits; substrates; 2.1 to 2.4 dB; 24 to 26 dB; 28 to 36 GHz; Al₂O₃; EHF; HEMT MM-wave amplifiers; HEMT multistage amplifiers; V-I characteristics; alumina substrates; equivalent circuit; millimetre-wave amplifiers; Acoustical engineering; FETs; HEMTs; Low-noise amplifiers; Millimeter wave devices; Millimeter wave technology; Noise level; Noise reduction; Semiconductor device noise; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar and Wireless Communications, 2002. MIKON-2002. 14th International Conference on

Print_ISBN

83-906662-5-1

Type

conf

DOI

10.1109/MIKON.2002.1017848

Filename

1017848