Title :
Geometry effect on power and ESD capability of LDMOS power devices
Author :
Chung, Young ; Besse, Patrice ; Zecri, Michel ; Baird, Bob ; Ida, Richard ; Nolhier, Nicolas ; Bafleur, Marise
Abstract :
Energy capability and electrostatic discharge characteristics of an LDMOS device exhibit a strong dependence on both active area and geometry of the device. It results from coupling processes between electrical and thermal entities within various components in the structure. This paper deals with energy and ESD ruggedness details of LDMOS devices in terms of device geometry using experimental and simulation results.
Keywords :
MOS integrated circuits; electrostatic discharge; size effect; ESD capability; LDMOS power devices; coupling processes; device geometry; electrical entities; energy capability; geometry effect; thermal entities; Clamps; Couplings; Electrostatic discharge; Energy measurement; Fingers; Geometry; Power measurement; Pulse measurements; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225279
