DocumentCode
1953108
Title
ESD: design for IC chip quality and reliability
Author
Duvvury, Charvaka
Author_Institution
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
fYear
2000
fDate
2000
Firstpage
251
Lastpage
259
Abstract
ESD is a major concern for IC chip quality both from building-in-reliability requirement and from long-term field operation requirement. The damage phenomena, either from human handling or machine contact, could appear as thermal damage and oxide rupture. In this paper, the IC damage phenomena due to ESD, the effects on the IC functionality, the proper methods to overcome these with on-chip protection designs, and the challenges facing these protection methods with the advanced process and package technologies are presented. Simulation and modeling methods that are currently used to improve the protection designs are also reviewed
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; electrostatic discharge; integrated circuit design; integrated circuit modelling; integrated circuit reliability; protection; ESD stress models; IC chip quality; IC chip reliability; IC damage phenomena; IC functionality; long-term field operation requirement; onchip protection designs; oxide rupture; thermal damage; Biological system modeling; Capacitance; Clamps; Electrostatic discharge; Humans; Immune system; Packaging; Protection; Silicon; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2000. ISQED 2000. Proceedings. IEEE 2000 First International Symposium on
Conference_Location
San Jose, CA
Print_ISBN
0-7695-0525-2
Type
conf
DOI
10.1109/ISQED.2000.838880
Filename
838880
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