DocumentCode :
1953108
Title :
ESD: design for IC chip quality and reliability
Author :
Duvvury, Charvaka
Author_Institution :
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
fYear :
2000
fDate :
2000
Firstpage :
251
Lastpage :
259
Abstract :
ESD is a major concern for IC chip quality both from building-in-reliability requirement and from long-term field operation requirement. The damage phenomena, either from human handling or machine contact, could appear as thermal damage and oxide rupture. In this paper, the IC damage phenomena due to ESD, the effects on the IC functionality, the proper methods to overcome these with on-chip protection designs, and the challenges facing these protection methods with the advanced process and package technologies are presented. Simulation and modeling methods that are currently used to improve the protection designs are also reviewed
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; electrostatic discharge; integrated circuit design; integrated circuit modelling; integrated circuit reliability; protection; ESD stress models; IC chip quality; IC chip reliability; IC damage phenomena; IC functionality; long-term field operation requirement; onchip protection designs; oxide rupture; thermal damage; Biological system modeling; Capacitance; Clamps; Electrostatic discharge; Humans; Immune system; Packaging; Protection; Silicon; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design, 2000. ISQED 2000. Proceedings. IEEE 2000 First International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-0525-2
Type :
conf
DOI :
10.1109/ISQED.2000.838880
Filename :
838880
Link To Document :
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