• DocumentCode
    1953108
  • Title

    ESD: design for IC chip quality and reliability

  • Author

    Duvvury, Charvaka

  • Author_Institution
    Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    251
  • Lastpage
    259
  • Abstract
    ESD is a major concern for IC chip quality both from building-in-reliability requirement and from long-term field operation requirement. The damage phenomena, either from human handling or machine contact, could appear as thermal damage and oxide rupture. In this paper, the IC damage phenomena due to ESD, the effects on the IC functionality, the proper methods to overcome these with on-chip protection designs, and the challenges facing these protection methods with the advanced process and package technologies are presented. Simulation and modeling methods that are currently used to improve the protection designs are also reviewed
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; electrostatic discharge; integrated circuit design; integrated circuit modelling; integrated circuit reliability; protection; ESD stress models; IC chip quality; IC chip reliability; IC damage phenomena; IC functionality; long-term field operation requirement; onchip protection designs; oxide rupture; thermal damage; Biological system modeling; Capacitance; Clamps; Electrostatic discharge; Humans; Immune system; Packaging; Protection; Silicon; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2000. ISQED 2000. Proceedings. IEEE 2000 First International Symposium on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7695-0525-2
  • Type

    conf

  • DOI
    10.1109/ISQED.2000.838880
  • Filename
    838880