• DocumentCode
    1953116
  • Title

    Crystalline Ge1-xSnx Heterostructures in Lateral High-Speed Devices

  • Author

    Jeschke, Sabina ; Pfeiffer, Olivier ; Schulze, Joerg ; Wilke, Marc

  • Author_Institution
    ZLW/IMA, RWTH Aachen Univ., Aachen, Germany
  • fYear
    2010
  • fDate
    10-16 Feb. 2010
  • Firstpage
    53
  • Lastpage
    58
  • Abstract
    This paper describes an approach to manufacture high-speed Germanium MOSFETS with strained channels made from Ge1-xsSnx-alloys while embedding the needed technology process flow into a virtual knowledge management environment based on a virtual nano electrical lab.
  • Keywords
    MOSFET; germanium alloys; semiconductor materials; tin alloys; virtual manufacturing; Ge1-xSnx; alloys; crystalline heterostructures; high-speed germanium MOSFET; lateral high-speed devices; strained channels; virtual nanoelectrical lab; Crystallization; Epitaxial growth; Germanium alloys; MOSFETs; Manufacturing; Molecular beam epitaxial growth; Nanoelectronics; Silicon; Space technology; Tin; CVD; Epitaxy; MBE; MOSFET; virtual knowledge spaces;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum, Nano and Micro Technologies, 2010. ICQNM '10. Fourth International Conference on
  • Conference_Location
    St. Maarten
  • Print_ISBN
    978-1-4244-5807-3
  • Type

    conf

  • DOI
    10.1109/ICQNM.2010.17
  • Filename
    5437792
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1953116