DocumentCode
1953132
Title
A 2 GHz, 60V-class, SOI power LDMOSFET for base station applications
Author
Lu, Hongfei ; Salama, C. Andre T
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Ont., Canada
fYear
2003
fDate
14-17 April 2003
Firstpage
270
Lastpage
273
Abstract
This paper describes the design of a SOI LDMOST suitable for 2GHz wireless base station power amplifiers. The device uses a split doping extended drain to achieve an optimized structure in terms of resistance, breakdown voltage and self-heating while minimizing Miller capacitance. Simulation indicates that the device features a cutoff frequency above 6GHz, a power gain of 26dB and a RF power density of 0.4 W per mm of channel width under class A operation.
Keywords
microwave power amplifiers; power MOSFET; silicon-on-insulator; 26 dB; 2E9 Hz; 60 V; 6E9 Hz; SOI; extended drain; minimized Miller capacitance; optimized structure; power LDMOSFET; power amplifier; silicon-on-insulator; split doping; wireless base station; Base stations; Capacitance; Doping profiles; Frequency; Heat sinks; Heat transfer; Linearity; Silicon; Substrates; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225280
Filename
1225280
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