A 2GHz 160V complementary silicon-on-insulator process for high-bandwidth amplification

High resolution display applications require both high-voltage and high-speed to realize low-dissipation video amplification. This paper presents a complementary 160V 2GHz silicon-on-insulator technology where LDMOS device structures are designed utilizing three-dimensional RESURF depletion. These structures exhibit a static power dissipation-switching speed figure-of-merit which is at least a factor-of-two lower than any technology reported-to-date. A 50MHz-bandwidth video amplifier with a 8800V/μs slew-rate and static power dissipation less than 0.8W/channel has been fabricated, validating the intrinsic performance benefit of thin-layer silicon-on-insulator for high-voltage high-bandwidth application.