DocumentCode
1953157
Title
3D-RESURF SOI LDMOSFET for RF power amplifiers
Author
Pathirana, G.P.V. ; Udrea, F. ; Ng, R. ; Garner, D.M. ; Amaratunga, G.A.J.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
fYear
2003
fDate
14-17 April 2003
Firstpage
278
Lastpage
281
Abstract
There has been an on going effort to improve RF performance in LDMOSFETs for high voltage applications. This paper examines the suitability of a 3D-RESURF LDMOSFET on SOI technology for RF power applications using the 3D-device simulator, Davinci. For the same blocking voltage rating, the 3D-RESURF device has improved current handling capability at high gate voltages. This in turn causes the transconductance to be higher, leading to overall better RF performance.
Keywords
MOSFET; power amplifiers; silicon-on-insulator; 3D-RESURF; 3D-device simulator; LDMOSFET; RF power amplifiers; SOI technology; high gate voltages; high voltage applications; higher transconductance; improved current handling capability; Cutoff frequency; Doping; Games; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon on insulator technology; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225282
Filename
1225282
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