A versatile, SOI BiCMOS technology with complementary lateral BJT´s

Author

Parke, S. ; Assaderaghi, F. ; Jian Chen ; King, J. ; Chenming Hu ; Ko, P.K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

453

Lastpage

456

Abstract

A silicon-on-insulator, fully-complementary BiCMOS process has been developed for realizing high-performance circuit operation in the sub-3.3 V power supply regime. Complementary, double-diffused lateral BJTs and fully-overlapped, asymmetrical DDD MOSFETs have been successfully integrated in a 10-mask process by utilizing the process simplifications that are unique to thin-film SOI substrates. The BJTs exhibit the highest lateral current gains reported to date, with h/sub fe/=120 and 225 for the NPN and PNP, respectively. NPN f/sub t/=4.5 GHz was achieved, and f/sub t/>20 GHz is possible with an improved layout. The MOSFETs demonstrate excellent short-channel behavior down to L/sub eff/=0.18 mu m, with T/sub ox/=10 nm. The p+ gate, SOI PMOS device exhibits superior I/sub dsat/ and g/sub msat/. A record propagation delay of 12 ps/stage at V/sub dd/=5 V and 300 K was obtained for the CMOS ring oscillators fabricated in this technology. This demonstrates the performance achievable with a deep-submicron SOI process.<>

Keywords

BiCMOS integrated circuits; elemental semiconductors; integrated circuit technology; semiconductor-insulator boundaries; silicon; 0.18 micron; 10-mask process; 12 ps; 3.3 V; 4.5 GHz; SOI BiCMOS technology; Si; asymmetrical DDD MOSFETs; complementary lateral BJT; deep-submicron SOI process; double-diffused lateral BJTs; fully-complementary process; fully-overlapped MOSFETs; high-performance circuit operation; lateral current gain; p+ gate SOI PMOS device; propagation delay; ring oscillators; short-channel behavior; sub-3.3 V power supply regime; thin-film SOI substrates; BiCMOS integrated circuits; Integrated circuit fabrication; Semiconductor-insulator interfaces; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307399

Filename

307399