Title :
Analysis of dynamic impatt oscillations caused by radiation induced deep centers
Author :
Siemienie, Ralf ; Lutz, Josef ; Herzer, Reinhard
Author_Institution :
Dept. of Solid-State Electron., Tech. Univ. of Ilmenau, Germany
Abstract :
The occurrence of high-frequency impatt oscillations is related to the presence of charged deep donor-states as generated by irradiation processes for carrier-lifetime control. This effect is well-known in electron-radiated devices. Device simulation predicts a similar effect in locally lifetime-controlled helium-radiated devices. The experiment gives an approval of the simulation results but shows some unexpected effects too.
Keywords :
carrier lifetime; circuit oscillations; irradiation induced creep; power electronics; carrier-lifetime control; device simulation; dynamic impatt oscillations; electron-radiated devices; helium-radiated devices; impatt oscillations analysis; lifetime-controlled devices; radiation induced deep centers; Annealing; Anodes; Circuit simulation; Diodes; Electrons; Predictive models; Process control; Solid state circuits; Spontaneous emission; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225283
