Kinetics of high concentration arsenic deactivation at moderate to low temperatures

Author

Luning, S. ; Rousseau, P.M. ; Griffin, P.B. ; Carey, P.G. ; Plummer, J.D.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

457

Lastpage

460

Abstract

This work investigates the kinetics of arsenic deactivation at temperatures from 500 to 800 degrees C and for concentrations between 1*10/sup 20/ and 1*10/sup 21//cm/sup 3/. Using profiles created by repeated laser melt annealing, we determine mobility as a function of both active and inactive dopant concentration and then characterize the dynamics of carrier deactivation. We observe retrograde resistivity versus concentration at high doses, which is explained by a mobility reduction due to the inactive arsenic and by retrograde electrical activity of the dopant itself.<>

Keywords

arsenic; carrier density; carrier mobility; doping profiles; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; laser beam annealing; semiconductor doping; semiconductor process modelling; silicon; 500 to 800 C; Si:As; active dopant concentration; carrier concentration; carrier deactivation; high concentration As deactivation; inactive dopant concentration; laser melt annealing; mobility reduction; retrograde resistivity; Charge carrier density; Charge carrier mobility; Conductivity; Laser annealing; Semiconductor device doping; Semiconductor process modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307400

Filename

307400