Title :
TiAl-based ohmic contacts on p-type SiC
Author :
Mysliwiec, Marcin ; Sochacki, Mariusz ; Kisiel, Ryszard ; Guziewicz, Marek ; Wzorek, Marek
Author_Institution :
Inst. of Micro- & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland
Abstract :
Titanium-aluminum alloys were successfully used to form low resistance ohmic contacts to p-type SiC. This work concerns two Al-Ti alloy compositions. Contacts were prepared by magnetron sputtering of bilayer Al-Ti and trilayer Ti-Al-Ti thin films and rapid thermal annealing at temperatures range 900°C ÷ 1000°C. Using scanning electron microscopy and profiler, an investigation of surface morphology of annealed contacts was conducted. The best resistivity of 5.8·10-5 Ωcm2 was attained on 100nm/26nm Al/Ti metallization of 80% at. Al alloy composition annealed at 1000°C for 2 min. Relatively low roughness of 30 nm was observed on trilayer Ti/Al/Ti metallization.
Keywords :
aluminium alloys; contact resistance; crystal morphology; electrical resistivity; metallic thin films; metallisation; ohmic contacts; rapid thermal annealing; scanning electron microscopy; semiconductor-metal boundaries; silicon compounds; sputter deposition; surface morphology; surface roughness; titanium alloys; wide band gap semiconductors; SiC; Ti-Al-Ti; TiAl; bilayer thin films; low resistance ohmic contacts; magnetron sputtering; metallization; profiling; rapid thermal annealing; resistivity; roughness; scanning electron microscopy; surface morphology; temperature 900 degC to 1000 degC; time 2 min; trilayer thin films; Annealing; Argon; Conductivity; Metallization; Ohmic contacts; Silicon carbide;
Conference_Titel :
Electronics Technology (ISSE), 2011 34th International Spring Seminar on
Conference_Location :
Tratanska Lomnica
Print_ISBN :
978-1-4577-2111-3
DOI :
10.1109/ISSE.2011.6053552
