Advanced electro-thermal SPICE modeling of large power IGBTs

Author

Azar, R. ; Udrea, F. ; Ng, W.T. ; Dawson, F. ; Findlay, W. ; Waind, P. ; Amaratunga, G.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

fYear

2003

fDate

14-17 April 2003

Firstpage

291

Lastpage

294

Abstract

A novel IGBT electro-thermal model is implemented for the first time in PSpice for the simulation of steady state and transient temperature dependent IGBT operation including self-heating and latchup. A thermal circuit representing the characteristics of the IGBT package is developed and validated against a finite element model and experimental results. A novel electrical IGBT model based on the Kraus model is developed to account for the electrical impact of instantaneous junction temperature variations due to self-heating. The resulting electro-thermal model is validated against experimental dc and transient FBSOA measurements.

Keywords

SPICE; circuit CAD; circuit simulation; insulated gate bipolar transistors; temperature measurement; transient analysis; IGBT electro-thermal model; IGBT operation; IGBT package characteristic; Kraus model; electro-thermal SPICE modeling; experimental dc measurements; finite element model; junction temperature variation; large power IGBT; latchup; self-heating; steady state simulation; thermal circuit; transient FBSOA measurements; transient temperature dependent; Coupling circuits; Finite element methods; Immune system; Insulated gate bipolar transistors; Power engineering and energy; SPICE; Semiconductor device packaging; Steady-state; Temperature dependence; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225285

Filename

1225285