High-performance scaled flash-type EEPROMs with heavily oxynitrided tunnel oxide films

We have proposed a heavy oxynitridation (RTONO) technology of the tunnel oxide, and successfully applied it to the scaled flash-type EEPROMs. Excellent program and erase (P/E) endurance properties were obtained with much small window closure (less than 6%). In addition, good P/E speeds are also obtained. The SIMS results show that a large number of N atoms (>10/sup 20/ atoms/cm/sup 3/) are incorporated into SiO/sub 2/, while the number of H atoms is decreased. Accordingly, almost no increase of trapped charge by the P/E stress is induced. Thus, this technology is the key to providing flash-EEPROM in the submicron regime.<>