DocumentCode
1953243
Title
Lifetime modeling of thermomechanics-related failure mechanisms in high power IGBT modules for traction applications
Author
Ciappa, Mauro ; Carbognani, Flavio ; Fichtner, Wolfgang
Author_Institution
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fYear
2003
fDate
14-17 April 2003
Firstpage
295
Lastpage
298
Abstract
In this paper we propose different procedures to extract the statistical distribution of the thermal cycles suffered by power devices submitted to arbitrary mission profiles and we discuss the different lifetimes predicted by them under the assumption of linear accumulation of the damage produced by low cycling fatigue. Furthermore, we introduce a novel prediction procedure, which is based on some fundamental equations, which take into consideration the creep experienced by compliant materials when they are submitted to thermal cycles.
Keywords
creep fracture; failure analysis; fatigue; insulated gate bipolar transistors; prediction theory; statistical distributions; traction; arbitrary mission profiles; creep; damage; high power IGBT modules; lifetime modeling; linear accumulation; low cycling fatigue; power devices; prediction procedure; statistical distribution; thermal cycles; thermomechanics-related failure mechanisms; traction applications; Creep; Equations; Failure analysis; Fatigue; Insulated gate bipolar transistors; Life estimation; Power system modeling; Statistical distributions; Temperature; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225286
Filename
1225286
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