• DocumentCode
    1953243
  • Title

    Lifetime modeling of thermomechanics-related failure mechanisms in high power IGBT modules for traction applications

  • Author

    Ciappa, Mauro ; Carbognani, Flavio ; Fichtner, Wolfgang

  • Author_Institution
    Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
  • fYear
    2003
  • fDate
    14-17 April 2003
  • Firstpage
    295
  • Lastpage
    298
  • Abstract
    In this paper we propose different procedures to extract the statistical distribution of the thermal cycles suffered by power devices submitted to arbitrary mission profiles and we discuss the different lifetimes predicted by them under the assumption of linear accumulation of the damage produced by low cycling fatigue. Furthermore, we introduce a novel prediction procedure, which is based on some fundamental equations, which take into consideration the creep experienced by compliant materials when they are submitted to thermal cycles.
  • Keywords
    creep fracture; failure analysis; fatigue; insulated gate bipolar transistors; prediction theory; statistical distributions; traction; arbitrary mission profiles; creep; damage; high power IGBT modules; lifetime modeling; linear accumulation; low cycling fatigue; power devices; prediction procedure; statistical distribution; thermal cycles; thermomechanics-related failure mechanisms; traction applications; Creep; Equations; Failure analysis; Fatigue; Insulated gate bipolar transistors; Life estimation; Power system modeling; Statistical distributions; Temperature; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
  • Print_ISBN
    0-7803-7876-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.2003.1225286
  • Filename
    1225286