Monolithic integration of InGaAs/InAlAs resonant tunneling diode and HEMT for single-transistor cell SRAM application

Author

Watanabe, Y. ; Nakasha, Y. ; Imanishi, K. ; Takikawa, M.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

475

Lastpage

478

Abstract

In this paper we report the first monolithic integration of InGaAs/InAlAs resonant tunneling diode (RTD) and high electron mobility transistor (HEMT) epitaxially grown on an InP substrate. The transconductance for a 1- mu m gate HEMT was 400 mS/mm and the peak-to-valley current ratio of the RTD was 3.1. Using this integrated structure, we demonstrate a static RAM cell circuit, consisting of a single transistor with two RTDs on the transistor. The memory cell circuit exhibits bistability, based on the RTD´s negative differential resistance (NDR), at supply voltages from 0.6 to 1.1 V.<>

Keywords

III-V semiconductors; SRAM chips; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; monolithic integrated circuits; negative resistance; resonant tunnelling devices; tunnel diodes; 0.6 to 1.1 V; 1 micron; 400 mS/mm; HEMT; InGaAs-InAlAs; InP; InP substrate; NDR; RTD; bistability; epitaxially growth; high electron mobility transistor; integrated structure; monolithic integration; negative differential resistance; resonant tunneling diode; single-transistor cell SRAM application; static RAM cell circuit; transconductance; Aluminum compounds; Gallium compounds; Indium compounds; MODFETs; Monolithic integrated circuits; Resistance; Resonant tunneling devices; SRAM chips; Tunnel diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307404

Filename

307404