DocumentCode :
1953317
Title :
Vertical N-channel FLIMOSFETs for future 12 V/42 V dual batteries automotive applications
Author :
Alves, S. ; Morancho, F. ; Reynès, J-M ; Lopes, B.
Author_Institution :
LAAS, CNRS, Toulouse, France
fYear :
2003
fDate :
14-17 April 2003
Firstpage :
308
Lastpage :
311
Abstract :
In this paper, new Vertical FLI-MOSFETs dedicated to automotive applications are proposed for the first time: in these devices, only one P Floating Island is introduced in the N- epitaxial region. In term of "specific on-resistance/breakdown voltage" trade-off, it is shown that the FLIMOSFET exhibits better performance than the conventional VDMOSFET and approaches the well-known "silicon limit". This is due to the strong reduction of access (Ra.S) and drift (Rb.S) resistances, because of the increase in the N- epitaxial layer doping concentration. In other words, the FLIMOSFET appears to be one of the best Power MOSFET in low voltage applications.
Keywords :
automotive electronics; power MOSFET; power electronics; thermal stability; N- epitaxial region; P Floating Island; automotive applications; doping concentration; drift resistance; dual batteries; low voltage application; power MOSFET; silicon limit; strong access reduction; vertical N-channel FLIMOSFET; Automotive applications; Batteries; Breakdown voltage; Doping; Epitaxial layers; Impedance; Low voltage; MOSFETs; Power electronics; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
Type :
conf
DOI :
10.1109/ISPSD.2003.1225289
Filename :
1225289
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1953317
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