Title :
Single-electron switch for phase-locked single-electron logic devices
Author :
Nakazato, K. ; White, J.D.
Author_Institution :
Cavendish Lab., Cambridge Univ., UK
Abstract :
Single-electron switch is proposed and analysed as a basic logic/memory component, in which binary unity/zero is represented by the presence/absence of a single-electron and the binary codes can be exchanged between different nodes by changing external biases. To realise single-electron switch, a novel side-gated FET structure is proposed. The performance of phase-locked single-electron logic, which is constructed by single-electron switches, is analysed from the measured tunnelling characteristics.<>
Keywords :
field effect integrated circuits; integrated circuit technology; integrated logic circuits; logic devices; nanotechnology; tunnelling; binary codes; binary unity/zero; external biases; nanotechnology; phase-locked single-electron logic devices; side-gated FET structure; single-electron switch; tunnelling characteristics; FET integrated circuits; Integrated circuit fabrication; Logic devices; Nanotechnology; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307407
