Single-electron switch for phase-locked single-electron logic devices

Author

Nakazato, K. ; White, J.D.

Author_Institution

Cavendish Lab., Cambridge Univ., UK

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

487

Lastpage

490

Abstract

Single-electron switch is proposed and analysed as a basic logic/memory component, in which binary unity/zero is represented by the presence/absence of a single-electron and the binary codes can be exchanged between different nodes by changing external biases. To realise single-electron switch, a novel side-gated FET structure is proposed. The performance of phase-locked single-electron logic, which is constructed by single-electron switches, is analysed from the measured tunnelling characteristics.<>

Keywords

field effect integrated circuits; integrated circuit technology; integrated logic circuits; logic devices; nanotechnology; tunnelling; binary codes; binary unity/zero; external biases; nanotechnology; phase-locked single-electron logic devices; side-gated FET structure; single-electron switch; tunnelling characteristics; FET integrated circuits; Integrated circuit fabrication; Logic devices; Nanotechnology; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307407

Filename

307407

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1953381