Title :
A material innovation for the electronic industry: float zone single crystal silicon with 200mm diameter
Author :
Altmannshofer, L. ; Grundner, M. ; Virbulis, J. ; Hage, J.
Author_Institution :
Wacker Siltronic AG, Burghausen, Germany
Abstract :
The diameter of commercially available Float Zone (FZ) single crystal silicon s restricted to 150mm currently. We recently succeeded to in pulling the first crystals of orientation (100) with 200mm diameter. Results concerning resistance and bulk properties are reported in this paper. They confirm that the quality of these crystals regarding resistance variation and bulk characteristics is comparable with or even exceeds that of 6" material.
Keywords :
carrier lifetime; electronics industry; elemental semiconductors; materials properties; silicon; 150 mm; 200 mm; 6 in; Si; bulk characteristics; electronic industry; float zone single crystal silicon; material innovation; resistance variation; Crystalline materials; Crystals; Diodes; Electrical resistance measurement; Electronics industry; Pollution measurement; Position measurement; Silicon; Technological innovation; Thermal resistance;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225293
