Method for electrical detection of bond wire lift-off for power semiconductors

Author

Lehmann, J. ; Netzel, M. ; Herzer, R. ; Pawel, S.

Author_Institution

Semikron Elektron. GmbH, Nuremberg, Germany

fYear

2003

fDate

14-17 April 2003

Firstpage

333

Lastpage

336

Abstract

A novel approach is presented for detecting bond wire lift-off in power semiconductor devices while they are in operation. The aim is to improve the reliability of power electronic systems. The method comprises a specific bond assembly and an integrated subcircuit as part of the gate driver, and serves to detect bond wire lift-off in parallel switched power devices, a typical end-of-life phenomenon encountered in modules, which results in loss of contact and therefore of controllability. The former is detected and the system is prevented from going abruptly into failure mode, so that the destruction of devices is safely avoided.

Keywords

application generators; failure analysis; intelligent control; power semiconductor devices; quality assurance; semiconductor device reliability; bond assembly; bond wire lift-off; electrical detection; end-of-life phenomenon; failure mode; gate driver; integrated subcircuit; parallel switched power devices; power electronic system; power semiconductors; reliability; Assembly; Bonding; Controllability; Driver circuits; Insulated gate bipolar transistors; Power system reliability; Resistors; Stress; Testing; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225295

Filename

1225295