DocumentCode :
1953438
Title :
Method for electrical detection of bond wire lift-off for power semiconductors
Author :
Lehmann, J. ; Netzel, M. ; Herzer, R. ; Pawel, S.
Author_Institution :
Semikron Elektron. GmbH, Nuremberg, Germany
fYear :
2003
fDate :
14-17 April 2003
Firstpage :
333
Lastpage :
336
Abstract :
A novel approach is presented for detecting bond wire lift-off in power semiconductor devices while they are in operation. The aim is to improve the reliability of power electronic systems. The method comprises a specific bond assembly and an integrated subcircuit as part of the gate driver, and serves to detect bond wire lift-off in parallel switched power devices, a typical end-of-life phenomenon encountered in modules, which results in loss of contact and therefore of controllability. The former is detected and the system is prevented from going abruptly into failure mode, so that the destruction of devices is safely avoided.
Keywords :
application generators; failure analysis; intelligent control; power semiconductor devices; quality assurance; semiconductor device reliability; bond assembly; bond wire lift-off; electrical detection; end-of-life phenomenon; failure mode; gate driver; integrated subcircuit; parallel switched power devices; power electronic system; power semiconductors; reliability; Assembly; Bonding; Controllability; Driver circuits; Insulated gate bipolar transistors; Power system reliability; Resistors; Stress; Testing; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
Type :
conf
DOI :
10.1109/ISPSD.2003.1225295
Filename :
1225295
Link To Document :
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