Title :
Aspects of applying flip-chip technology for SiC power devices assembly
Author :
Mysliwiec, Marcin ; Guziewicz, M. ; Kisiel, Ryszard
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland
Abstract :
The aim of our paper is to consider the possibility of applying flip-chip technology for assembly of SiC Schottky diode into a ceramic package. Ag micropowder was used for assembly SiC structure to DBC interposer of the ceramic package. Ag or Au balls were used as flip-chip connection material. The parameters of I-V characteristics were used as a quality factor to determine the Schottky diode after hermetization into ceramic package in comparison with bare SiC diode.
Keywords :
Q-factor; Schottky diodes; assembling; flip-chip devices; gold alloys; semiconductor device packaging; silicon compounds; silver alloys; wide band gap semiconductors; Ag; Au; DBC interposer; I-V characteristics; Schottky diode; SiC; ceramic package; flip-chip connection material; flip-chip technology; hermetization; power device assembly; quality factor; Aging; Assembly; Ceramics; Flip-chip devices; Gold; Schottky diodes; Silicon carbide;
Conference_Titel :
Electronics Technology (ISSE), 2013 36th International Spring Seminar on
Conference_Location :
Alba Iulia
DOI :
10.1109/ISSE.2013.6648221
