DocumentCode
1953447
Title
Aspects of applying flip-chip technology for SiC power devices assembly
Author
Mysliwiec, Marcin ; Guziewicz, M. ; Kisiel, Ryszard
Author_Institution
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland
fYear
2013
fDate
8-12 May 2013
Firstpage
90
Lastpage
93
Abstract
The aim of our paper is to consider the possibility of applying flip-chip technology for assembly of SiC Schottky diode into a ceramic package. Ag micropowder was used for assembly SiC structure to DBC interposer of the ceramic package. Ag or Au balls were used as flip-chip connection material. The parameters of I-V characteristics were used as a quality factor to determine the Schottky diode after hermetization into ceramic package in comparison with bare SiC diode.
Keywords
Q-factor; Schottky diodes; assembling; flip-chip devices; gold alloys; semiconductor device packaging; silicon compounds; silver alloys; wide band gap semiconductors; Ag; Au; DBC interposer; I-V characteristics; Schottky diode; SiC; ceramic package; flip-chip connection material; flip-chip technology; hermetization; power device assembly; quality factor; Aging; Assembly; Ceramics; Flip-chip devices; Gold; Schottky diodes; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology (ISSE), 2013 36th International Spring Seminar on
Conference_Location
Alba Iulia
ISSN
2161-2528
Type
conf
DOI
10.1109/ISSE.2013.6648221
Filename
6648221
Link To Document