Title :
FieldStop IGBT with MOS-like (tailless) turn-off
Author :
Hüsken, H. ; Stückler, F.
Author_Institution :
Infineon Technol., Munchen, Germany
Abstract :
We present electrical characteristics of a 1200V FieldStop-IGBT based on a high resistance substrate and device thickness between 100μm and 120μm. The vertical optimization leads to strongly reduced conduction and switching losses, especially under soft switching (ZVT) conditions. The turn-off transients are strongly affected by the design. Under hard-switching conditions, this IGBT shows a MOS-like current waveform without the tail current typical for bipolar devices.
Keywords :
insulated gate bipolar transistors; switching transients; transients; 100 mum; 120 mum; 1200 V; FieldStop IGBT; MOS-like turn-off; current waveform; device thickness; electrical characteristics; hard-switching; high resistance substrate; reduced conduction; reduced switching losses; soft switching; tail current; turn-off transients; vertical optimization; Constraint optimization; Doping; Electric resistance; Electric variables; Frequency; Insulated gate bipolar transistors; Switching converters; Switching loss; Tail; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225296
