DocumentCode :
1953494
Title :
Controllable Highly Sensitive Silicon Hall Element with Improved Reliabylity Under Extreme Conditions
Author :
Baranochnikov, M.L. ; Leonov, A.V. ; Mokrushin, A.D. ; Mordkovich, V.N. ; Omelianovskaya, N.I. ; Pazhin, D.M. ; Goncharov, V.P. ; Filatov, M.M.
Author_Institution :
Russian Acad. of Sci., Moscow
fYear :
2007
fDate :
26-29 June 2007
Firstpage :
241
Lastpage :
242
Abstract :
The design features and main characteristics of the new type of magnetic field converters, i.e., the controllable Field Effect Hall Sensor based on the "silicon-on-insulator" (SOI) structure, are considered. The FEHS design features and the use of SOI structures as the design and technological basis of its production imply the uniqueness of electrical and reliability characteristics.
Keywords :
Hall effect transducers; magnetic field measurement; magnetic sensors; silicon-on-insulator; SOI; controllable field effect Hall sensor; magnetic field converters; reliability characteristics; sensitive silicon Hall element; silicon-on-insulator; Electrodes; Insulation; Magnetic field measurement; Magnetic materials; Magnetic sensors; Microelectronics; Ohmic contacts; Sensor phenomena and characterization; Silicon on insulator technology; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility and Electromagnetic Ecology, 2007 7th International Symposium on
Conference_Location :
Saint-Petersburg
Print_ISBN :
978-1-4244-1270-9
Electronic_ISBN :
978-1-4244-1270-9
Type :
conf
DOI :
10.1109/EMCECO.2007.4371698
Filename :
4371698
Link To Document :
بازگشت