DocumentCode
1953495
Title
1.7kV NPT V-groove clustered IGBT: fabrication and experimental demonstration
Author
Spulbe, O. ; Sweet, M. ; Vershinin, K. ; Luther-King, N. ; Sankara-Narayanan, E.M. ; De Souza, M.M. ; Flores, D. ; Millan, J.
Author_Institution
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
fYear
2003
fDate
14-17 April 2003
Firstpage
345
Lastpage
348
Abstract
Novel 1.7kV NPT V-groove Trench CIGBT structures have been fabricated using an inexpensive wet etch technology for the trench gates. This approach can significantly reduce the costs inherent in the case of a conventional RIE. Experimental results show current saturation and short-circuit capability. Moreover, the V-groove CIGBT can be switched off without any additional circuit.
Keywords
etching; insulated gate bipolar transistors; 1.7 kV; NPT IGBT; V-groove clustered IGB; cost reduction; current saturation; experimental demonstration; fabrication; short-circuit capability; trench gates; wet etch technology; Anodes; Cathodes; Costs; Electrons; Fabrication; Insulated gate bipolar transistors; Protection; Thyristors; Voltage; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225298
Filename
1225298
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