High-speed 600V NPT-IGBT with unclamped inductive switching (UIS) capability

Author

Yamaguchi, Masakazu ; Omura, Ichiro ; Urano, Satoshi ; Ogura, Tsuneo

Author_Institution

Semicond. Co., Toshiba Corp., Kawasaki, Japan

fYear

2003

fDate

14-17 April 2003

Firstpage

349

Lastpage

352

Abstract

In this paper, a new design concept is proposed for 600V IGBTs to achieve both fast switching and unclamped inductive switching (UIS) capability. The concept is based on optimizing p-emitter efficiency (γ) for each condition of on-state and sustaining mode. Here the γ is reduced in on-state to lower the turn-off loss, but kept enough in sustaining mode to suppress the electric field. In particular, it is show that the γ of more than 0.4 in sustaining mode prevents the short-time UIS failure. The concept was successfully applied to NPT-IGBT, and the fabricated device has demonstrated fast switching adaptable to a frequency of 150 kHz and UIS capability of 28mJ/mm² at a high current density ( J_C) of 200A/cm₂ (about 6 times the J_C of MOSFETs).

Keywords

insulated gate bipolar transistors; switched mode power supplies; switching; 150 kHz; 600 V; UIS; electric field suppression; fast switching; high-speed NPT-IGBT; on-state; p-emitter efficiency; sustaining mode; turn-off loss; unclamped inductive switching capability; Costs; Current density; Energy measurement; Frequency; Insulated gate bipolar transistors; MOSFETs; Switched-mode power supply; Switches; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225299

Filename

1225299