Title :
Robust, wide range hydrogen sensor
Author :
Rodriguez, J.L. ; Hughes, R.C. ; Corbett, W.T. ; McWhorter, P.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
A new robust, wide-range hydrogen sensor technology integrates catalytic gate transistors and resistors with a baseline CMOS process. Pd or PdNi gate transistors detect low concentrations of hydrogen (ppm) and Pd or PdNi thin film resistors sense higher concentrations of hydrogen (up to 100%). Fabrication of both sensors on the same die allows detection of hydrogen over a dynamic range of 6 orders of magnitude. On-chip power transistor heaters and diode thermometers allow accurate chip temperature control.<>
Keywords :
CMOS integrated circuits; catalysis; electric sensing devices; gas sensors; hydrogen; integrated circuit technology; nickel alloys; palladium; palladium alloys; thin film resistors; thin film transistors; H/sub 2/; H/sub 2/ sensor; Pd; Pd gate; PdNi; PdNi gate; PdNi thin film resistors; baseline CMOS process; catalytic gate transistors; chip temperature control; diode thermometers; power transistor heaters; resistors; CMOS integrated circuits; Detectors; Gas detectors; Hydrogen; Integrated circuit fabrication; Nickel alloys; Palladium; Palladium alloys; Thin film resistors; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307415