DocumentCode
1953575
Title
A two-dimensional analysis of hot-carrier photoemission from LOCOS- and trench-isolated MOSFETs
Author
Ohzone, T. ; Iwata, H. ; Uraoka, Y. ; Odanaka
Author_Institution
Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
527
Lastpage
530
Abstract
A two-dimensional (2-D) photoemission analysis of hot-carrier effects in LOCOS- and trench-isolated CMOS devices is described. Photoemission-intensity profiles and photon-energy distributions can be measured in spatial resolution of 0.1 mu m. This technology reveals the 2-D edge effect of photoemission-intensity depending on isolation technology. The significant difference of photoemission characteristics is observed in LOCOS- and trench-isolated n-MOSFETs.<>
Keywords
CMOS integrated circuits; characteristics measurement; hot carriers; photoemission; semiconductor device testing; 2D edge effect; CCD; CMOS devices; LOCOS; hot-carrier effects; hot-carrier photoemission; image processor; photoemission analysis; photoemission-intensity profiles; photon-energy distributions; spatial resolution; trench-isolated MOSFET; two-dimensional analysis; CMOS integrated circuits; Hot carriers; Photoelectricity; Semiconductor device testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307416
Filename
307416
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