Title :
A two-dimensional analysis of hot-carrier photoemission from LOCOS- and trench-isolated MOSFETs
Author :
Ohzone, T. ; Iwata, H. ; Uraoka, Y. ; Odanaka
Author_Institution :
Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan
Abstract :
A two-dimensional (2-D) photoemission analysis of hot-carrier effects in LOCOS- and trench-isolated CMOS devices is described. Photoemission-intensity profiles and photon-energy distributions can be measured in spatial resolution of 0.1 mu m. This technology reveals the 2-D edge effect of photoemission-intensity depending on isolation technology. The significant difference of photoemission characteristics is observed in LOCOS- and trench-isolated n-MOSFETs.<>
Keywords :
CMOS integrated circuits; characteristics measurement; hot carriers; photoemission; semiconductor device testing; 2D edge effect; CCD; CMOS devices; LOCOS; hot-carrier effects; hot-carrier photoemission; image processor; photoemission analysis; photoemission-intensity profiles; photon-energy distributions; spatial resolution; trench-isolated MOSFET; two-dimensional analysis; CMOS integrated circuits; Hot carriers; Photoelectricity; Semiconductor device testing;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307416
