Hot-carrier degradation of p-MOSFET´s in analog operation: the relevance of the channel-length-independent drain conductance degradation

Author

Thewes, R. ; Brox, M. ; Tempel, G. ; Weber, W. ; Goser, K.

Author_Institution

Siemens AG, Munich, Germany

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

531

Lastpage

534

Abstract

In this work, we investigate the hot-carrier degradation of p-MOSFET´s with channel lengths up to 10 mu m used for analog operation, and monitor the device parameters relevant for this mode. While the transconductance g/sub m/ shows the usual decrease in degradation for greater lengths, we show the drain conductance g/sub DS/ to yield a strong degradation independent of channel length. We demonstrate a method of extrapolation to operating conditions and present circuits in which we expect problems with this new effect.<>

Keywords

CMOS integrated circuits; extrapolation; hot carriers; insulated gate field effect transistors; linear integrated circuits; semiconductor device models; 10 mum; CMOS operational amplifiers; analog operation; channel length; channel-length-independent drain conductance degradation; extrapolation; hot-carrier degradation; lifetime prediction; p-MOSFET; transconductance; Analog integrated circuits; CMOS integrated circuits; Extrapolation; Hot carriers; Insulated gate FETs; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307417

Filename

307417