Title :
Hot-carrier degradation of p-MOSFET´s in analog operation: the relevance of the channel-length-independent drain conductance degradation
Author :
Thewes, R. ; Brox, M. ; Tempel, G. ; Weber, W. ; Goser, K.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
In this work, we investigate the hot-carrier degradation of p-MOSFET´s with channel lengths up to 10 mu m used for analog operation, and monitor the device parameters relevant for this mode. While the transconductance g/sub m/ shows the usual decrease in degradation for greater lengths, we show the drain conductance g/sub DS/ to yield a strong degradation independent of channel length. We demonstrate a method of extrapolation to operating conditions and present circuits in which we expect problems with this new effect.<>
Keywords :
CMOS integrated circuits; extrapolation; hot carriers; insulated gate field effect transistors; linear integrated circuits; semiconductor device models; 10 mum; CMOS operational amplifiers; analog operation; channel length; channel-length-independent drain conductance degradation; extrapolation; hot-carrier degradation; lifetime prediction; p-MOSFET; transconductance; Analog integrated circuits; CMOS integrated circuits; Extrapolation; Hot carriers; Insulated gate FETs; Semiconductor device modeling;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307417
