DocumentCode :
1953605
Title :
Universal description of hot-carrier-induced interface states in NMOSFETs
Author :
Woltjer ; Paulzen, G.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fYear :
1992
fDate :
13-16 Dec. 1992
Firstpage :
535
Lastpage :
538
Abstract :
In NMOSFETs, hot-carrier-induced damage primarily consists of interface states. We present a new model to predict interface state formation over the full gate voltage range. To this end we add an empirical oxide-field dependence to the "lucky-electron" model. Furthermore, we establish the relation between interface states and the degradation of transistor parameters. We checked both new models experimentally with many degradation experiments (including charge pumping) at various stress voltages on NMOSFETs of 0.2-2.0 mu m gate length and 5.5-25 nm oxide thickness with either conventional drain or LDD.<>
Keywords :
hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device models; 0.2 to 2 mum; 5.5 to 25 nm; LDD; NMOSFET; charge pumping; conventional drain; damage; degradation of transistor parameters; empirical oxide-field dependence; hot-carrier-induced interface states; lucky-electron model; stress voltages; transconductance; Hot carriers; Insulated gate FETs; Interface phenomena; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0817-4
Type :
conf
DOI :
10.1109/IEDM.1992.307418
Filename :
307418
Link To Document :
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