DocumentCode :
1953613
Title :
The impact of sub-threshold current on ultra high density trench MOSFET for synchronous rectifier application
Author :
Sun, Nick X. ; Huang, Alex Q.
Author_Institution :
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear :
2003
fDate :
14-17 April 2003
Firstpage :
358
Lastpage :
361
Abstract :
This paper provides a thorough study of body diode reverse recovery issues for low voltage (30V) rated ultra high-density trench MOSFET. Furthermore, a ultra density trench MOSFET structure with Ron_spec (Vgs=5V)=10.4mΣmm2, Qgd= 1.1nC/mm2 and Qoss=2nC/mm2, is proposed.
Keywords :
Schottky diodes; Schottky effect; power MOSFET; solid-state rectifiers; switching transients; 30 V; body diode reverse recovery; sub-threshold current impact; synchronous rectifier application; trench MOSFET; ultra high density MOSFET; Capacitors; Circuit simulation; MOSFET circuits; Medical simulation; Nanoscale devices; Power MOSFET; Rectifiers; Schottky diodes; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
Type :
conf
DOI :
10.1109/ISPSD.2003.1225301
Filename :
1225301
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1953613
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