Title :
3D deformation FEM simulations and measurement during VDMOS transistor operation
Author :
Marcault, E. ; Weidmann, D. ; Bourennane, A. ; Breil, M. ; Charpiot, L.
Author_Institution :
LAAS, Toulouse, France
Abstract :
This paper deals with the reliability of power device assembly. We make use of 3D electro-thermo-mechanical simulations tools to highlight the power chip deformation during its conducting state. Moreover, we carry out experimental deformation measurement using a T.D.M® (Topography and Deformation Measurement) equipment. These simulations and measurements could allow to evaluate the reached mechanical stress level in a power assembly (in the different materials and at the different interfaces) during power device operation.
Keywords :
assembling; deformation; finite element analysis; integrated circuit reliability; power MOSFET; 3D deformation FEM simulation; 3D electro-thermo-mechanical simulations tool; VDMOS transistor operation; experimental deformation measurement; mechanical stress level evaluation; power chip deformation; power device assembly reliability; power device operation; topography; Aluminum; Finite element methods; Joints; MOSFET circuits; Semiconductor device measurement; Thermal expansion; Three dimensional displays;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on
Conference_Location :
Cascais
Print_ISBN :
978-1-4673-1512-8
DOI :
10.1109/ESimE.2012.6191781
