Title :
A novel high side FET with reduced switching losses
Author :
Peake, Steven T. ; Kelly, Brendan ; Grove, Ray
Author_Institution :
Philips Power Semicond., Stockport, UK
Abstract :
This paper proposes a novel MOSFET structure that offers the low on-state resistance typical of trench technology coupled with the superior switching performance of planar DMOS technology. The proposed novel structure exhibits a simulated on-state resistance typical of trench technology but exhibits a simulated figure of merit [Rdson × Qgd] of ∼mOhms.nC and, more importantly, exhibits a simulated switching loss that is >60% less than that simulated for planar DMOS technology.
Keywords :
power MOSFET; switching transients; high side FET; low on-state resistance; planar DMOS technology; reduced switching losses; simulated switching loss; superior switching performance; trench technology; Biomedical electrodes; FETs; Geometry; Immune system; MOSFET circuits; Medical simulation; Power MOSFET; Power semiconductor switches; Switching loss; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225302
