Title :
Determination of recombination centers in c-Si solar cells from dark I–V characteristics
Author :
Cerna, Ladislava ; Benda, Vitezslav ; Machacek, Zdenek
Author_Institution :
Dept. of Electrotechnol., Czech Tech. Univ. in Prague, Prague, Czech Republic
Abstract :
For photovoltaic cells efficiency is the quality of material key ingredient. Impurities in this material create recombination centers which cut down the effective carrier charge lifetime. The method of dark current measurement, which is described in paper, can be used for dominant impurity determination.
Keywords :
electric current measurement; photovoltaic cells; solar cells; c-Si solar cells; carrier charge lifetime; dark I-V characteristics; dark current measurement; impurity determination; photovoltaic cells; recombination center; Current measurement; Energy states; Photovoltaic cells; Temperature; Temperature dependence; Temperature measurement; Voltage measurement;
Conference_Titel :
Electronics Technology (ISSE), 2011 34th International Spring Seminar on
Conference_Location :
Tratanska Lomnica
Print_ISBN :
978-1-4577-2111-3
DOI :
10.1109/ISSE.2011.6053572
